Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate Simulation Results and Analysis
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- Category: Molybdenum & Sapphire Growth Furnace News
- Published on 14 May 2014
- Written by Cloudy
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To observe the bowing with the same thickness of 500 nm, the diameters of the sapphire substrate with two
inches, four inches, six inches, and eight inches were compared.
With the increase of size, the degree of bowing is also growing. When the diameter of the substrate is eight inches, its bowing has reached nearly 500 nm, similar to the thickness of the epitaxial wafers of sapphire substrate, which can lead to the rejection of disk accident. It is obviously one of the main problems needed to be solved when large-area sapphire substrate is epitaxial. As shown in Figure5, the bowing amount and the square of sapphire diameter (radius) are seen in a roughly linear relationship.
Under the same heating condition, we researched the bowing degree of several four-inch substrates of which the thickness is 300 nm, 400 nm, 500 nm, and 600 nm, respectively. In the case of different thicknesses, the degree of the bowing only changes by a few nanometers, which can be neglected, that is, the thickness has less influence on the bowing.
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