Growth of Thin Films of Molybdenum Oxide by Atomic Layer Deposition
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- Category: Molybdenum knowledge
- Published on 29 July 2013
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Thin films of MoO3 have been obtained by the atomic layer deposition (ALD) technique using molybdenum hexacarbonyl (Mo(CO)6), ozone, and water as precursors.
A window for ALD growth was found in the temperature range 152 to 172 °C. Self-limiting growth was verified at a deposition temperature of 163 °C.
The upper temperature range is determined by the thermal stability of the Mo(CO)6 precursor. The growth dynamics was further investigated by quartz crystal microbalance to determine the effect of ozone and water on the deposition process.
Growth using only water as oxygen source is hardly detectable. The growth rate increases to 0.75 Å per cycle when ozone is introduced. X-ray diffraction analysis indicates that the films are amorphous as deposited。
But crystallise into the α- and β-MoO3 phases during annealing in air at 500 °C and to phase-pure, highly oriented α-MoO3 at 600 °C.
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