Resistance Switching Properties of Molybdenum Oxide Films
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- Category: Molybdenum knowledge
- Published on 22 July 2013
- Hits: 345
Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention.
In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching.
The samples oxidized between 400 and 600 °C were composed of MoO3 and were switchable. Current-to-voltage curves, indicated the yielding of both the monopolar and bipolar switching properties.
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