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British "Nature Nanotechnology" magazine reported that the monolayer molybdenite semiconductor materials exhibit good properties, some properties than silicon is now widely used and popular graphene research, is expected to become the next generation of semiconductor materials. Compared with silicon material widely used now, molybdenite has two main advantages: First, to achieve the same effect volume smaller. Only 0.65 nanometers thick molybdenite material in which electrons can move freely like that at 2 nm thick silicon material, and at the same time, the prior art can not be made ​​of silicon material takes molybdenite material as thin; Second, energy consumption more low. It is estimated that the energy molybdenite transistors made ​​of consumption in standby mode is only about one hundred thousandth of silicon transistors. 

 

Swiss Federal Institute of Technology in Lausanne (EPFL) nanoelectronics and structure (LANES) laboratories that use a product called molybdenite (MoS2) a single molecular layer of semiconductor material, or used to make smaller, more energy-efficient electronics chip, the next generation of nano-electronic devices in the field, than traditional silicon material or fullerene advantage. 

 

Molybdenite abundant in nature, or lubricating oil additives typically used in alloy steel components in the field of electronics has not been extensively studied. "It is a two-dimensional material, very thin, very easy to use in nanotechnology, in the manufacture of miniature transistors, light emitting diodes (LEDs), solar cells, etc. have great potential." EPFL Professor Andreas Keith said they would this material with silicon and fullerenes currently mainly used in electronic and computer chips were compared. 

 

Compared with silicon, one of the advantages of molybdenite is smaller, molybdenite monolayer is two-dimensional, but silicon is a three-dimensional material. "In a molybdenite 0.65 nm thick film, electronic movement and as easy on two nanometers thick silicon film." Keith explains, "but it is currently impossible to do as molybdenite silicon thin film so thin. "Another big advantage of molybdenite is less than the energy consumption of silicon. In solid state physics, the description of band theory of electrons in a specific energy of the material. In semiconductors, the presence of free electrons in the energy band between those referred to as "band gap." If the band gap too small nor too big, you can skip some of the electronic band gap, can more effectively control the electronic behavior of materials, switching circuits easier. Molybdenite monolayer internal bandgap naturally have larger, although its electron mobility is poor, but in the manufacture of transistors, hafnium oxide dielectric with a lower chamber single wicket would enable the movement of molybdenite greatly increased, reaching the level of fullerene nanobelts. Fullerene is no band gap in order to artificially create a band gap in the above is very complex, but also reduce the electron mobility, or the need for high voltage. Because there is a direct bandgap molybdenite can be used with single-hui between molybdenum channel field effect manufacturing. 

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